Product Summary

The 2mbi100u4a-120-50 is an IGBT MODULE.

Parametrics

2mbi100u4a-120-50 absolute maximum ratings: (1)Collector-Emitter voltage, VCES: 1200 V; (2)Gate-Emitter voltage, VGES: ±20 V; (3)Collector current Ic: 150 A; (4)Storage temperature, PC: 540 W; (5)Collector Power Dissipation, TJ: +150 ℃; (6)Junction temperature, TSTG: -40 to +125 ℃; (7)Isolation voltage, VISO: 2500 VAC; (8)Screw Torque: 3.5 Nm.

Features

2mbi100u4a-120-50 features: (1)Zero gate voltage collector current, ICES: 1.0 mA; (2)Gate-Emitter leakage current, IGES: 200 nA; (3)Gate-Emitter threshold current, VGEth: 4.5 to 8.5 V; (4)Collector-Emitter saturation voltage, VCE: 2.05 to 2.20 V; (5)Input capacitance, Cies: 11 nF; (6)Turn-on time, TON: 0.32 to 1.20 us; (7)Turn-off time, TOFF: 0.41 to 1.00 us; (8)Forward on voltage, VF: 1.80 to 1.95 V; (9)Reverse recovery time, trr: 0.35 us; (10)Lead resistance, terminal-chip, Rlead: 1.39 mΩ.

Diagrams

2mbi100u4a-120-50 block diagram