Product Summary

The bsm150gb120dn2b is an IGBT module with low loss IGBT2 and EmCon diode.

Parametrics

bsm150gb120dn2b absolute maximum ratings: (1)collector-emitter voltage:１２00V; (2)repetitive peak collector current:300A; (3)total power dissipation:1,2 kw; (4)gate-emitter peak voltage:±20V; (5)DC-collector current:TC=80℃, Tvj=150℃:150A, TC=25℃, Tvj=150℃:300A.

Features

bsm150gb120dn2b features: (1)gate threshold voltage:4.5V to 6.5V; (2)gate charge:1.60μC; (3)internal gate resistor:2.5Ω; (4)input capacitance:11.0nF; (5)reverse transfer capacitance:0.70nF; (6)collector-emitter cut-off current:5.0mA; (7)gate-emitter leakage current:400nA.

Diagrams

bsm150gb120dn2b pin connection