(Hong Kong)
Product Summary
The bsm250d120dn2e 3224 is an IGBT Power Module.
Parametrics
bsm250d120dn2e 3224 absolute maximum ratings: (1)Collector-emitter voltage, VCE: 1200 V; (2)Collector-gate voltage, VCGR: 1200 V; (3)Gate-emitter voltage, VGE: ±20 V; (4)DC collector current, IC: 38 A; (5)Pulsed collector current, tp = 1 ms, ICpuls: 76 A; (6)Power dissipation per IGBT, Ptot: 200 W; (7)Chip temperature, Tj: + 150 ℃; (8)Storage temperature, Tstg: -55 to + 150 ℃; (9)Thermal resistance, chip case, RthJC: ≤0.6 K/W; (10)Diode thermal resistance, chip case, RthJCD: ≤ 1 K/W; (11)Diode thermal resistance, chip-case,chopper, RTHJCDC: ≤ 0.8 K/W; (12)Insulation test voltage, t = 1min., Vis: 2500 Vac; (13)Creepage distance: 20 mm; (14)Clearance: 11; (15)DIN humidity category, DIN 40 040: F; (16)IEC climatic category, DIN IEC 68-1: 55/150/56.
Features
bsm250d120dn2e 3224 features: (1)Single switch with chopper diode; (2)Including fast free-wheeling diodes; (3)Package with insulated metal base plate.
Diagrams
