(Hong Kong)
Product Summary
The bsm10gp120 is an IGBT-Module.
Parametrics
bsm10gp120 absolute maximum ratings: (1)Periodische Rückw. Spitzensperrspannung repetitive peak reverse voltage, VRRM: 1600 V; (2)Durchlaβstrom Grenzeffektivwert RMS forward current per chip, IFRMSM: 40 A; (3)Dauergleichstrom DC forward current, Id: 10 A; (4)Stoβstrom Grenzwert, IFSM: 300 A; (5)surge forward current: 230 A; (6)Grenzlastintegral, I2t: 450 A2s; (7)I2t - value: 260 A2s.
Features
bsm10gp120 features: (1)Kollektor-Emitter-Sperrspannung collector-emitter voltage, VCES: 1200 V; (2)Kollektor-Dauergleichstrom DC-collector current，IC: 20 A; (3)Periodischer Kollektor Spitzenstrom repetitive peak collector current, ICRM: 20 A; (4)Gesamt-Verlustleistung total power dissipation, Ptot: 100 W; (5)Gate-Emitter-Spitzenspannung gate-emitter peak voltage, VGES: +/- 20V V.
Diagrams
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 BSM10GP120 |
Infineon Technologies |
IGBT Modules 1200V 10A PIM |
Data Sheet |
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BSM10GP120_B9 |
Infineon Technologies |
IGBT Modules IGBT 1200V 10A |
Data Sheet |
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