Product Summary
The SI4438DY-T1-E3 is an N-Channel MOSFET. The application of the SI4438DY-T1-E3 includes DC-to-DC and AC-to-DC Oring Diode Applications.
Parametrics
SI4438DY-T1-E3 absolute maximum ratings: (1)Drain-Source Voltage, VDS: 30 V; (2)Gate-Source Voltage, VGS: ±20 V; (3)Continuous Drain Current (TJ = 150 ℃), ID: 36 A; (4)Pulsed Drain Current, IDM: 70 A; (5)continuous Source Current, IS: 7.0 A; (6)Maximum Power Dissipation, PD: 7.8 W; (7)Operating Junction and Storage Temperature Range, TJ, Tstg: –55 to 150 ℃.
Features
SI4438DY-T1-E3 features: (1)Halogen-free According to IEC 61249-2-2 Available; (2)TrenchFET Power MOSFET; (3)100 % Rg Tested.
Diagrams
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![]() MOSFET 30V 36A 7.8W |
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![]() MOSFET 40V 10.5A 0.014Ohm |
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![]() MOSFET 40V 10.5A 2.9W 14mohm @ 10V |
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![]() SI4401DDY-T1-GE3 |
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![]() MOSFET 40V 16.1A P-CH MOSFET |
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![]() SI4401DY |
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![]() MOSFET 40V 10.5A 3W |
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![]() SI4401DY-E3 |
![]() Vishay/Siliconix |
![]() MOSFET 40V 10.5A 3W |
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![]() Negotiable |
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