Product Summary

The SI4413DY-TI-E3 is a P-Channel MOSFET. The applications of the SI4413DY-TI-E3 include Notebook, Load switch, Battery switch.

Parametrics

SI4413DY-TI-E3 absolute maximum ratings: (1)Drain-Source Voltage, VDS: -30 V; (2)Gate-Source Voltage, VGS: ±20 V; (3)Continuous Drain Current (TJ = 150 ℃), ID: -13 A; (4)Pulsed Drain Current, IDM: -50 A; (5)continuous Source Current, IS: -2.7 A; (6)Maximum Power Dissipation, PD: 3.0 W; (7)Operating Junction and Storage Temperature Range, TJ, Tstg: –55 to 150 ℃.

Features

SI4413DY-TI-E3 feature: TrenchFET Power MOSFET.

Diagrams

SI4413DY-TI-E3 block diagram