Product Summary

The SI4412DY-TI-E3 is a Single N-Channel Logic Level PowerTrencha MOSFET. The SI4412DY-TI-E3 is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. The applications of the SI4412DY-TI-E3 include Battery switch, Load switch, Motor controls.

Parametrics

SI4412DY-TI-E3 absolute maximum ratings: (1)Drain-Source Voltage, VDSS: 30 V; (2)Gate-Source Voltage, VGSS: ±20 V; (3) Drain Current-Continuous, ID: 7.0 A; (4)Power Dissipation for Single Operation, PD: 2.5 W; (5)Operating Junction and Storage Temperature Range, TJ, Tstg: –55 to 150 ℃.

Features

SI4412DY-TI-E3 features: (1)7 A, 30 V. RDS(ON) = 0.028 Ω @ VGS = 10 V; (2)Low gate charge.; (3)Fast switching speed.; (4)High performance trench technology for extremely low RDS(ON); (5)High power and current handling capability.

Diagrams

SI4412DY-TI-E3 block diagram