Product Summary

The SI4403DY-TI-E3 is a P-Channel MOSFET. The applications of the SI4403DY-TI-E3 include Load Switch, Game Stations, Notebooks, Desktops.

Parametrics

SI4403DY-TI-E3 absolute maximum ratings: (1)Drain-Source Voltage, VDS: –20 V; (2)Gate-Source Voltage, VGS: ±8 V; (3)Continuous Drain Current (TJ = 150 ℃), ID: –7 to –5.0 A; (4)Pulsed Drain Current, IDM: –30 A; (5)continuous Source Current, IS: –2.1 to –1.3 A; (6)Maximum Power Dissipation, PD: 2.5 to 1.35 W; (7)Operating Junction and Storage Temperature Range, TJ, Tstg: –55 to 150 ℃.

Features

SI4403DY-TI-E3 feature: TrenchFET Power MOSFETS.

Diagrams

SI4403DY-TI-E3 block diagram