Product Summary

The MD6003 is a complementary dual general purpose transistor.

Parametrics

MD6003 absolute maximum ratings: (1)VCBO, Collector – Base Voltage: 50V; (2)VEBO, Emitter – Base Voltage: 5.0V; (3)IC, Collector Current: 500mA; (4)TJ, Tstg, Operating and Storage Junction Temperature Range: –65 to +200 ℃; (5)PD, Total Device Dissipation @ TA = 25 ℃: 575mW; (6)PD, Total Device Dissipation @ TC = 25 ℃: 1.8mW.

Features

MD6003 features: (1)V(BR)CEO*, Collector – Emitter Breakdown Voltage: 30 V; (2)V(BR)CBO, Collector – Base Breakdown Voltage: 50 V; (3)V(BR)EBO, Emitter – Base Breakdown Voltage: 5.0 V; (4)IBEV, Base Cutoff Current: 50 V; (5)ICEV, Collector Cut-off Current: 30 nA; (6)ICBO, Collector Cutoff Current: 100 nA; (7)hFE, DC Current Gain: 40 to 70 V.

Diagrams

MD6003 block diagram