Product Summary

The M29W320EB70N6E is a 3V supply flash memory. The blocks can be protected to prevent accidental Program or Erase commands from modifying the memory. Program and Erase commands are written to the Command Interface of the memory. Chip Enable, Output Enable and Write Enable signals control the bus operation of the memory. They allow simple connection to most microprocessors, often without additional logic. The M29W320EB70N6E is offered in TSOP48 (12x20mm), and TFBGA48 (6x8mm, 0.8mm pitch) packages. The memory is supplied with all the bits erased.

Parametrics

M29W320EB70N6E absolute maximum ratings: (1)Temperature Under Bias: –50 to 125 °C; (2)Storage Temperature: –65 to 150 °C; (3)Input or Output Voltage: –0.6 to VCC +0.6 V; (4)Supply Voltage: –0.6 to 4 V; (5)Identification Voltage: –0.6 to 13.5 V; (6)Program Voltage: –0.6 to 13.5 V.

Features

M29W320EB70N6E features: (1)supply voltage Vcc = 2.7V to 3.6V for program, erase; (2)and read; (3)access time: 45, 55, 70ns; (4)programming time: 10us per byte/word typical; (5)11 memory blocks: 1 boot block (top or bottom location), 2 parameter and 8 main blocks; (6)program/erase controller embedded byte/word program; (7)algorithms; (8)erase suspend and resume modes read and program another block during; (9)erase suspend; (10)unlock bypass program command faster production/batch programming; (11)temporary block unprotection mode; (12)low power consumption standby and automatic standby; (13)100,000 program/erase cycles per block; (14)Manufacturer Code: 0020h; (15)Top Device Code M29W400DT: 00EEh; (16)Bottom Device Code M29W400D: 00EFh.

Diagrams

M29W320EB70N6E pin connection

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M29W320EB70N6E
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