(Hong Kong)
Product Summary
The BUR52 is a silicon multiepitaxial planar NPN transistor in modified Jedec TO-3 metal case. The BUR52 intended for use in switching and linear applications in military and industrial equipment. The application of the BUR52 includes linear and switching industrial equipment.
Parametrics
BUR52 absolute maximum ratings: (1)Collector-Base Voltage (IE = 0): 350 V; (2)Collector-Emitter Voltage (IB = 0): 250 V; (3)Emitter-Base Voltage (IC = 0): 10 V; (4)Collector Current: 60 A; (5)Collector Peak Current (tp = 10 ms): 80 A; (6)Base Current: 16 A; (7)Total Dissipation at Tc ≤ 25℃: 350 W; (8)Storage Temperature: -65 to 200 ℃; (9)Max. Operating Junction Temperature: 200 ℃.
Features
BUR52 features: (1)sgs-thomson preferred salestype; (2)npn transistor; (3)maintains good switching; (4)performance even without; (5)negative base drive.
Diagrams
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 BUR52 |
STMicroelectronics |
Transistors Bipolar (BJT) DISC BY STM 08/01 TO-3 NPN PWR DARL |
Data Sheet |
Negotiable |
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BUR50 |
Other |
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BUR51 |
STMicroelectronics |
Transistors Bipolar (BJT) NPN High Current |
Data Sheet |
Negotiable |
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BUR52 |
STMicroelectronics |
Transistors Bipolar (BJT) DISC BY STM 08/01 TO-3 NPN PWR DARL |
Data Sheet |
Negotiable |
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