Product Summary

The BD314 is an isc Silicon PNP Power Transistor. The application of the BD314 includes Designed for high quality amplifiers operating up to 60 watts into 4 ohm load.

Parametrics

BD314 absolute maximum ratings: (1)Collector-Base Voltage: -80 V; (2)Collector-Emitter Voltage: -80 V; (3)Emitter-Base Voltage: -5 V; (4)Collector Current-Continuous: -10 A; (5)Collector Current-Peak: -20 A; (6)Base Current-Continuous: -4 A; (7)Collector Power Dissipation@TC=25℃: 115 W; (8)Junction Temperature: 200 ℃; (9)Storage Temperature: -65 to 200 ℃.

Features

BD314 features: (1)Excellent Safe Operating Area; (2)DC Current Gain-hFE= 25(Min.)@IC = -4A; (3)Collector-Emitter Saturation Voltage-: VCE(sat)= -1.0 V(Max)@ IC = -5A; (4)Complement to Type BD313.

Diagrams

BD314 block diagram