(Hong Kong)
Product Summary
The AO4801 is a P-Channel Enhancement Mode Field Effect Transistor. The AO4801 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5 V. The AO4801 is suitable for use as a load switch or in PWM applications. The AO4801 may be used in a common drain arrangement to form a bidirectional blocking switch. Standard Product AO4801 is Pb-free (meets ROHS & Sony 259 specifications). The AO4801L is a Green Product ordering option.
Parametrics
AO4801 absolute maximum ratings: (1)Drain-Source Voltage, VDS: -30 V; (2)Gate-Source Voltage, VGS: ±12 V; (3)Continuous Drain Current, ID: -5 A; (4)Pulsed Drain Current, IDM: -30 A; (5)Power Dissipation, PD: 2W; (6)Junction and Storage Temperature Range, TJ: -55 to 150 ℃.
Features
AO4801 features: (1)VDS (V) = -30V; (2)ID = -5 A (VGS =-10V); (3)RDS(ON) ＜ 49mΩ (VGS = -10V); (4)RDS(ON) ＜ 64mΩ(VGS =-4.5V); (5)RDS(ON) ＜ 120mΩ (VGS = -2.5V).
Diagrams
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 AO4801 |
Other |
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Data Sheet |
Negotiable |
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AO4801A |
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MOSFET 2P-CH 30V 5A 8SOIC |
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