Product Summary
The AO4422 is an N-channel enhancement mode field effect transistor. The AO4422 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the source inductance.
Parametrics
AO4422 absolute maximum ratings: (1)Drain-Source Voltage: 30V; (2)Gate-Source Voltage: +/-20V; (3)Continuous Drain Current: 11 or 9.3 A; (4)Pulsed Drain Current: 50 A; (5)Power Dissipation: 3.0 W; (6)Junction and Storage Temperature Range: -55 to 150 ℃.
Features
AO4422 features: (1)VDS (V) = 30V; (2)ID = 11A; (3)RDS(ON) < 15mΩ (VGS = 10V); (4)RDS(ON) < 24mΩ (VGS = 4.5V).
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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AO4422 |
Other |
Data Sheet |
Negotiable |
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AO4422A |
Other |
Data Sheet |
Negotiable |
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AO4422L |
Other |
Data Sheet |
Negotiable |
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