Product Summary
The AO4410 is an N-channel enhancement mode field effect transistor. The AO4410 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity, body diode characteristics and ultra-low gate resistance. This device is ideally suited for use as a low side switch in Notebook CPU core power conversion. Standard product AO4410 is Pb-free (meets ROHS & Sony 259 specifications).
Parametrics
AO4410 absolute maximum ratings: (1)Drain-Source Voltage: 30V; (2)Gate-Source Voltage: +/-12V; (3)Continuous Drain Current: 18 or 15 A; (4)Pulsed Drain Current: 80 A; (5)Power Dissipation: 3.0 W; (6)Junction and Storage Temperature Range: -55 to 150 ℃.
Features
AO4410 features: (1)VDS (V) = 30V; (2)ID = 18A (VGS = 10V); (3)RDS(ON) < 5.5mΩ¸ (VGS = 10V); (4)RDS(ON) < 6.2mΩ¸ (VGS = 4.5V).
Diagrams
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![]() AO4402 |
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![]() MOSFET N-CH 20V 20A 8SOIC |
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![]() AO4403 |
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![]() MOSFET P-CH -30V -6.1A 8-SOIC |
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![]() AO4404 |
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![]() AO4404B |
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![]() MOSFET N-CH 30V 8.5A 8-SOIC |
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![]() AO4405 |
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