(Hong Kong)
Product Summary
The STK0460 is an Advanced Power MOSFET.
Parametrics
STK0460 absolute maximum ratings: (1)Drain-source voltage, VDSS: 600 V; (2)Gate-source voltage, VGSS: ±30 V; (3)Drain current (DC), ID: 4 A; (4)Drain current (Pulsed), IDM: 16 A; (5)Drain Power dissipation, PD: 25 W; (6)Avalanche current (Single), IAS: 4 A; (7)Single pulsed avalanche energy, EAS: 150 mJ; (8)Avalanche current (Repetitive), IAR: 4 A; (9)Repetitive avalanche energy, EAR: 7 mJ; (10)Junction temperature, TJ: 150; (11)Storage temperature range, Tstg: -55 to 150 ℃.
Features
STK0460 features: (1)High Voltage: BVDSS=600V(Min.); (2)Low Crss : Crss=7.5pF(Typ.); (3)Low gate charge: Qg=16nC(Typ.); (4)Low RDS(on):RDS(on)=2.5Ω(Max.).
Diagrams
