Product Summary

The SI4868DY-T1-E3 is an N-Channel Reduced Qg, Fast Switching MOSFET. The applications of the SI4868DY-T1-E3 include Buck Converter, High Side, Low Side, Synchronous Rectifier, Secondary Rectifier.

Parametrics

SI4868DY-T1-E3 absolute maximum ratings: (1)Drain-Source Voltage, VDS: 30 V; (2)Gate-Source Voltage, VGS: ±20 V; (3)Continuous Drain Current (TJ = 150 ℃), ID: 16 A; (4)Pulsed Drain Current, IDM: ±50 A; (5)continuous Source Current, IS: 3.0 A; (6)Maximum Power Dissipation, PD: 3.5 W; (7)Operating Junction and Storage Temperature Range, TJ, Tstg: –55 to 150 ℃.

Features

SI4868DY-T1-E3 features: (1)TrenchFET Power MOSFETS; (2)PWM Optimized for High Efficiency; (3)100% RG Tested.

Diagrams

SI4868DY-T1-E3 block diagram