Product Summary
The SI4501DY-T1-E3 is a Half-Bridge Complementary MOSFET.
Parametrics
SI4501DY-T1-E3 absolute maximum ratings: (1)Drain-Source Voltage, VDS: 30 V; (2)Gate-Source Voltage, VGS: ±20 V; (3)Continuous Drain Current (TJ = 150 ℃), ID: ±9 A; (4)Pulsed Drain Current, IDM: ±30 A; (5)continuous Source Current, IS: 1.7 A; (6)Maximum Power Dissipation, PD: 2.5 W; (7)Operating Junction and Storage Temperature Range, TJ, Tstg: –55 to 150 ℃.
Features
SI4501DY-T1-E3 features: (1)Gate Threshold Voltage, VGS( h): 0.8 V; (2)Gate-Body leakage, IGSS: ±100 nA; (3)Zero Gate Voltage Drain Current, IDSS: 1 μA; (4)On-State Drain Current, ID(on): 30 A; (5)Drain-Source On-State Resistance, RDS: 0.015 Ω; (6)Forward Transconductance,GFS: 20 S; (7)Diode Forward Voltage, VSD: 0.71 V.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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SI4501DY-T1-E3 |
Vishay/Siliconix |
MOSFET 30/8 9/6.2A |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
Si4500BDY |
Other |
Data Sheet |
Negotiable |
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SI4500BDY-T1 |
Vishay/Siliconix |
MOSFET 20V 9.1/5.3A 1.3W |
Data Sheet |
Negotiable |
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SI4500BDY-T1-E3 |
Vishay/Siliconix |
MOSFET 20V 7/4.5A 2.5W |
Data Sheet |
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SI4500BDY-T1-GE3 |
Vishay/Siliconix |
MOSFET 20V 9.1/5.3A 2.5W 20/60mohm @ 4.5V |
Data Sheet |
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SI4500DY |
Vishay/Siliconix |
MOSFET 20V 7/4.5A 2.5W |
Data Sheet |
Negotiable |
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SI4500DY-E3 |
Vishay/Siliconix |
MOSFET 20V 7/4.5A 2.5W |
Data Sheet |
Negotiable |
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