Product Summary

The SI4435DY-T1-E3 is a P-Channel PowerTrench MOSFET. The SI4435DY-T1-E3 is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. The SI4435DY-T1-E3 has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V). The applications of the SI4435DY-T1-E3 include Power management, Load switch, Battery protection.

Parametrics

SI4435DY-T1-E3 absolute maximum ratings: (1)Drain-Source Voltage, VDSS: -30 V; (2)Gate-Source Voltage, VGSS: ±20 V; (3) Drain Current-Continuous, ID: -8.8 A; (4)Power Dissipation for Single Operation, PD: 2.5 W; (5)Operating Junction and Storage Temperature Range, TJ, Tstg: –55 to 150 ℃.

Features

SI4435DY-T1-E3 features: (1)-8.8 A, -30 V. RDS(ON) = 20 Ω @ VGS = -10 V; (2)Low gate charge.; (3)Fast switching speed.; (4)High performance trench technology for extremely low RDS(ON); (5)High power and current handling capability.

Diagrams

SI4435DY-T1-E3 block diagram