Product Summary

The SI4431DY-T1-E3 is a P-Channel Logic Level PowerTrench MOSFET. The SI4431DY-T1-E3 is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. The applications of the SI4431DY-T1-E3 include DC/DC converter, Load switch, Motor Drive.

Parametrics

SI4431DY-T1-E3 absolute maximum ratings: (1)Drain-Source Voltage, VDSS: -30 V; (2)Gate-Source Voltage, VGSS: ±20 V; (3) Drain Current-Continuous, ID: -6.3 A; (4)Power Dissipation for Single Operation, PD: 2.5 W; (5)Operating Junction and Storage Temperature Range, TJ, Tstg: –55 to 150 ℃.

Features

SI4431DY-T1-E3 features: (1)-6.3 A, -30 V. RDS(ON) = 0.032 Ω @ VGS = -10 V; (2)Low gate charge.; (3)Fast switching speed.; (4)High performance trench technology for extremely low RDS(ON); (5)High power and current handling capability.

Diagrams

 SI4431DY-T1-E3 block diagram

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