SI4430DY-T1-E3

SI4430DY-T1-E3, N-Channel MOSFET, 30 V, ±23 A, Vishay Siliconix

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Price:: US $0.20~0.60 / piece [Get Latest Price]

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Qty (lots)	Price/lot
1 ~ 10 :	0.60 / Piece
10 ~ 100 :	0.40 / Piece
100 ~ 1000 :	0.20 / Piece

PartNumber:: SI4430DY-T1-E3

Brand:: Vishay Siliconix - Vishay | Pack: | D/C:

Availability:: Supply Ability: 10000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

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Products Upload time: 2013-08-30

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Part Number:SI4430DY-T1-E3
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Product Summary

The SI4430DY-T1-E3 is an N-Channel MOSFET.

Parametrics

SI4430DY-T1-E3 absolute maximum ratings: (1)Drain-Source Voltage, VDS: 30 V; (2)Gate-Source Voltage, VGS: ±20 V; (3)Continuous Drain Current (TJ = 150 ℃), ID: ±23 A; (4)Pulsed Drain Current, IDM: ±60 A; (5)continuous Source Current, IS: 2.9 A; (6)Maximum Power Dissipation, PD: 3.5 W; (7)Operating Junction and Storage Temperature Range, TJ, Tstg: –55 to 150 ℃.

Features

SI4430DY-T1-E3 features: (1)Gate Threshold Voltage, VGS(th): 1.7 V; (2)Gate-Body Leakage, IGSS: ±100 nA; (3)Zero Gate Voltage Drain Current, IDSS: 1 μA; (4)On-State Drain Current, ID(on): 30 A; (5)Drain-Source On-State Resistance, RDS(on): 0.004 Ω; (6)Forward Transconductance, gfs: 80 S; (7)Diode Forward Voltage, VSD: 0.8 to 1.2 V.