Product Summary
The SI4425DY-T1-E3 is a Single P-Channel Logic Level PowerTrencha MOSFET. The SI4425DY-T1-E3 is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.
Parametrics
SI4425DY-T1-E3 absolute maximum ratings: (1)Drain-Source Voltage, VDSS: -30 V; (2)Gate-Source Voltage, VGSS: ±20 V; (3) Drain Current-Continuous, ID: -11 A; (4)Power Dissipation for Single Operation, PD: 2.5 W; (5)Operating Junction and Storage Temperature Range, TJ, Tstg: –55 to 150 ℃.
Features
SI4425DY-T1-E3 features: (1)-11 A, -30 V. RDS(ON) = 0.014 Ω @ VGS = -10 V; (2)Low gate charge.; (3)High performance trench technology for extremely low RDS(ON); (4)High power and current handling capability.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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SI4425DY-T1-E3 |
Vishay/Siliconix |
MOSFET 30V 11A 2.5W |
Data Sheet |
Negotiable |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
Si4401BDY |
Other |
Data Sheet |
Negotiable |
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SI4401BDY-T1-E3 |
Vishay/Siliconix |
MOSFET 40V 10.5A 0.014Ohm |
Data Sheet |
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SI4401BDY-T1-GE3 |
Vishay/Siliconix |
MOSFET 40V 10.5A 2.9W 14mohm @ 10V |
Data Sheet |
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SI4401DDY-T1-GE3 |
Vishay/Siliconix |
MOSFET 40V 16.1A P-CH MOSFET |
Data Sheet |
|
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SI4401DY |
Vishay/Siliconix |
MOSFET 40V 10.5A 3W |
Data Sheet |
Negotiable |
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SI4401DY-E3 |
Vishay/Siliconix |
MOSFET 40V 10.5A 3W |
Data Sheet |
Negotiable |
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