Product Summary

The SI4425DY-T1-E3 is a Single P-Channel Logic Level PowerTrencha MOSFET. The SI4425DY-T1-E3 is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

Parametrics

SI4425DY-T1-E3 absolute maximum ratings: (1)Drain-Source Voltage, VDSS: -30 V; (2)Gate-Source Voltage, VGSS: ±20 V; (3) Drain Current-Continuous, ID: -11 A; (4)Power Dissipation for Single Operation, PD: 2.5 W; (5)Operating Junction and Storage Temperature Range, TJ, Tstg: –55 to 150 ℃.

Features

SI4425DY-T1-E3 features: (1)-11 A, -30 V. RDS(ON) = 0.014 Ω @ VGS = -10 V; (2)Low gate charge.; (3)High performance trench technology for extremely low RDS(ON); (4)High power and current handling capability.

Diagrams

SI4425DY-T1-E3 block diagram 

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
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SI4425DY-T1-E3
SI4425DY-T1-E3

Vishay/Siliconix

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Data Sheet

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Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
Si4401BDY
Si4401BDY

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Data Sheet

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Data Sheet

0-1: $1.06
1-25: $0.84
25-50: $0.79
50-100: $0.76
SI4401BDY-T1-GE3
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Vishay/Siliconix

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Data Sheet

0-1: $1.06
1-10: $0.84
10-50: $0.80
50-100: $0.76
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Data Sheet

0-1: $0.58
1-25: $0.44
25-100: $0.39
100-250: $0.34
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Data Sheet

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Data Sheet

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