(Hong Kong)
Product Summary
The SI4421DY-T1-E3 is a P-Channel MOSFET. The applications of the SI4421DY-T1-E3 include Game Station, Load Switch.
Parametrics
SI4421DY-T1-E3 absolute maximum ratings: (1)Drain-Source Voltage, VDS: -20 V; (2)Gate-Source Voltage, VGS: ±8 V; (3)Continuous Drain Current (TJ = 150 ℃), ID: -14 A; (4)Pulsed Drain Current, IDM: -40 A; (5)continuous Source Current, IS: -2.7 A; (6)Maximum Power Dissipation, PD: 3.0 W; (7)Operating Junction and Storage Temperature Range, TJ, Tstg: –55 to 150 ℃.
Features
SI4421DY-T1-E3 feature: TrenchFET Power MOSFET.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 SI4421DY-T1-E3 |
Vishay/Siliconix |
MOSFET 20 Volt 14 Amp |
Data Sheet |
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| Image | Part No | Mfg | Description | |
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Si4401BDY |
Other |
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Data Sheet |
Negotiable |
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SI4401BDY-T1-E3 |
Vishay/Siliconix |
MOSFET 40V 10.5A 0.014Ohm |
Data Sheet |
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SI4401BDY-T1-GE3 |
Vishay/Siliconix |
MOSFET 40V 10.5A 2.9W 14mohm @ 10V |
Data Sheet |
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SI4401DDY-T1-GE3 |
Vishay/Siliconix |
MOSFET 40V 16.1A P-CH MOSFET |
Data Sheet |
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SI4401DY |
Vishay/Siliconix |
MOSFET 40V 10.5A 3W |
Data Sheet |
Negotiable |
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SI4401DY-E3 |
Vishay/Siliconix |
MOSFET 40V 10.5A 3W |
Data Sheet |
Negotiable |
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