Product Summary

The SI4416DY-TI-E3 is an N-Channel MOSFET.

Parametrics

SI4416DY-TI-E3 absolute maximum ratings: (1)Drain-Source Voltage, VDS: 30 V; (2)Gate-Source Voltage, VGS: ±20 V; (3)Continuous Drain Current (TJ = 150 ℃), ID: 9.0 A; (4)Pulsed Drain Current, IDM: 50 A; (5)continuous Source Current, IS: 2.1 A; (6)Maximum Power Dissipation, PD: 2.5 W; (7)Operating Junction and Storage Temperature Range, TJ, Tstg: –55 to 150 ℃.

Features

SI4416DY-TI-E3 feature: TrenchFET Power MOSFET.

Diagrams

SI4416DY-TI-E3 block diagram