Product Summary

The SI4408DY-TI-E3 is an N-Channel MOSFET. The application of the SI4408DY-TI-E3 includes Self-Driven Synchronous Rectification.

Parametrics

SI4408DY-TI-E3 absolute maximum ratings: (1)Drain-Source Voltage, VDS: 20 V; (2)Gate-Source Voltage, VGS: ±20 V; (3)Continuous Drain Current (TJ = 150 ℃), ID: 21 A; (4)Pulsed Drain Current, IDM: 60 A; (5)continuous Source Current, IS: 2.9 A; (6)Maximum Power Dissipation, PD: 3.5 W; (7)Operating Junction and Storage Temperature Range, TJ, Tstg: –55 to 150 ℃.

Features

SI4408DY-TI-E3 features: (1)TrenchFET Power MOSFET; (2)PWM Optimized for Fast Switching; (3)Low Switching Losses; (4)Low Gate Drive Losses; (5)100% RG Tested.

Diagrams

SI4408DY-TI-E3 block diagram