Product Summary

The SI4406DY-TI-E3 is an N-Channel MOSFET. The applications of the SI4406DY-TI-E3 include DC/DC Converters, Synchronous Rectifiers.

Parametrics

SI4406DY-TI-E3 absolute maximum ratings: (1)Drain-Source Voltage, VDS: 30 V; (2)Gate-Source Voltage, VGS: ±20 V; (3)Continuous Drain Current (TJ = 150 ℃), ID: 20 A; (4)Pulsed Drain Current, IDM: 60 A; (5)continuous Source Current, IS: 2.9 A; (6)Maximum Power Dissipation, PD: 3.5 W; (7)Operating Junction and Storage Temperature Range, TJ, Tstg: –55 to 150 ℃.

Features

SI4406DY-TI-E3 features: (1)TrenchFET Power MOSFET; (2)Optimized for “Low Side” Synchronous Rectifier Operation; (3)100% RG Tested.

Diagrams

SI4406DY-TI-E3 block diagram