Product Summary

The SI4405DY-TI-E3 is a P-Channel MOSFET. The applications of the SI4405DY-TI-E3 include Battery and Load Switching, Notebook Computers, Notebook Battery Packs.

Parametrics

SI4405DY-TI-E3 absolute maximum ratings: (1)Drain-Source Voltage, VDS: -30 V; (2)Gate-Source Voltage, VGS: ±20 V; (3)Continuous Drain Current (TJ = 150 ℃), ID: -17 A; (4)Pulsed Drain Current, IDM: -60 A; (5)continuous Source Current, IS: -2.9 A; (6)Maximum Power Dissipation, PD: 3.5 W; (7)Operating Junction and Storage Temperature Range, TJ, Tstg: –55 to 150 ℃.

Features

SI4405DY-TI-E3 features: (1)TrenchFET Power MOSFETS; (2)100% Rg Tested.

Diagrams

SI4405DY-TI-E3 block diagram