(Hong Kong)
Product Summary
The SI4401DY-T1-E3 is a P-Channel 40-V (D-S) MOSFET.
Parametrics
SI4401DY-T1-E3 absolute maximum ratings: (1)Drain-Source Voltage, VDS: -40 V; (2)Gate-Source Voltage, VGS: ± 20 V; (3)Continuous Drain Current, ID: -10.5 A; (4)Pulsed Drain Current (10 μs Pulse Width), IDM: -50 A; (5)Continuous Source Current (Diode Conduction), IS: -2.7 A; (6)Maximum Power Dissipation, PD: 3.0 W; (7)Operating Junction and Storage Temperature Range, TJ, Tstg: -55 to 150 ℃.
Features
SI4401DY-T1-E3 features: (1)Gate Threshold Voltage, VGS(th): -1.0 V; (2)Gate-Body Leakage, IGSS: ±100 nA ; (3)Zero Gate Voltage Drain Current, IDSS: -1 μA; (4)On-State Drain Currenta, ID(on): -30 A; (5)Drain-Source On-State Resistancea, rDS(on): 0.013 to 0.0155 Ω; (6)Forward Transconductancea, gfs: 26 S; (7)Diode Forward Voltagea, VSD: -0.74 to -1.1 V.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 SI4401DY-T1-E3 |
Vishay/Siliconix |
MOSFET 40V 10.5A 3W |
Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||||
|
SI4401DY-T1-E3 |
Vishay/Siliconix |
MOSFET 40V 10.5A 3W |
Data Sheet |
Negotiable |
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SI4410BDY-T1-E3 |
Vishay/Siliconix |
MOSFET 30V 10A 2.5W |
Data Sheet |
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SI4406DY-T1-GE3 |
Vishay/Siliconix |
MOSFET 30V 20A 3.5W 4.5mohm @ 10V |
Data Sheet |
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SI4408DY-T1 |
Vishay/Siliconix |
MOSFET 20V 21A 1.6W |
Data Sheet |
Negotiable |
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SI4411DY-T1-E3 |
Vishay/Siliconix |
MOSFET 30V 13A 3.0W 10mohm @ 10V |
Data Sheet |
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SI4412ADY-T1-GE3 |
Vishay/Siliconix |
MOSFET 30V 8.0A 2.5W 24mohm @ 10V |
Data Sheet |
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