Product Summary

The SI4401DY-T1-E3 is a P-Channel 40-V (D-S) MOSFET.

Parametrics

SI4401DY-T1-E3 absolute maximum ratings: (1)Drain-Source Voltage, VDS: -40 V; (2)Gate-Source Voltage, VGS: ± 20 V; (3)Continuous Drain Current, ID: -10.5 A; (4)Pulsed Drain Current (10 μs Pulse Width), IDM: -50 A; (5)Continuous Source Current (Diode Conduction), IS: -2.7 A; (6)Maximum Power Dissipation, PD: 3.0 W; (7)Operating Junction and Storage Temperature Range, TJ, Tstg: -55 to 150 ℃.

Features

SI4401DY-T1-E3 features: (1)Gate Threshold Voltage, VGS(th): -1.0 V; (2)Gate-Body Leakage, IGSS: ±100 nA ; (3)Zero Gate Voltage Drain Current, IDSS: -1 μA; (4)On-State Drain Currenta, ID(on): -30 A; (5)Drain-Source On-State Resistancea, rDS(on): 0.013 to 0.0155 Ω; (6)Forward Transconductancea, gfs: 26 S; (7)Diode Forward Voltagea, VSD: -0.74 to -1.1 V.

Diagrams

SI4401DY-T1-E3 block diagram 

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
SI4401DY-T1-E3
SI4401DY-T1-E3

Vishay/Siliconix

MOSFET 40V 10.5A 3W

Data Sheet

Negotiable 
Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
Si4401BDY
Si4401BDY

Other


Data Sheet

Negotiable 
SI4401BDY-T1-E3
SI4401BDY-T1-E3

Vishay/Siliconix

MOSFET 40V 10.5A 0.014Ohm

Data Sheet

0-1: $1.06
1-25: $0.84
25-50: $0.79
50-100: $0.76
SI4401BDY-T1-GE3
SI4401BDY-T1-GE3

Vishay/Siliconix

MOSFET 40V 10.5A 2.9W 14mohm @ 10V

Data Sheet

0-1: $1.06
1-10: $0.84
10-50: $0.80
50-100: $0.76
SI4401DDY-T1-GE3
SI4401DDY-T1-GE3

Vishay/Siliconix

MOSFET 40V 16.1A P-CH MOSFET

Data Sheet

0-1: $0.58
1-25: $0.44
25-100: $0.39
100-250: $0.34
SI4401DY
SI4401DY

Vishay/Siliconix

MOSFET 40V 10.5A 3W

Data Sheet

Negotiable 
SI4401DY-E3
SI4401DY-E3

Vishay/Siliconix

MOSFET 40V 10.5A 3W

Data Sheet

Negotiable