(Hong Kong)
Product Summary
The SI4392DY-T1-E3 is an N-Channel Reduced Qg, Fast Switching WFET. The applications of the SI4392DY-T1-E3 include High-Side DC/DC Conversion, Notebook, Server.
Parametrics
SI4392DY-T1-E3 absolute maximum ratings: (1)Drain-Source Voltage, VDS: 30 V; (2)Gate-Source Voltage, VGS: ± 20 V; (3)Continuous Drain Current, ID: 12.5 A; (4)Pulsed Drain Current (10 μs Pulse Width), IDM: 50 A; (5)Continuous Source Current (Diode Conduction), IS: 2.7 A; (6)Maximum Power Dissipation, PD: 3.0 W; (7)Operating Junction and Storage Temperature Range, TJ, Tstg: -55 to 150 ℃.
Features
SI4392DY-T1-E3 features: (1)Extremely Low Qgd WFET Technology for Switching Losses; (2)TrenchFET Power MOSFET; (3)100% R Tested.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 SI4392DY-T1-E3 |
Vishay/Siliconix |
MOSFET 30V 12.5A 3.0W |
Data Sheet |
Negotiable |
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Pricing (USD) |
Quantity | ||||
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SI4300DY |
Vishay/Siliconix |
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Data Sheet |
Negotiable |
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SI4300DY-E3 |
Vishay/Siliconix |
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Data Sheet |
Negotiable |
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SI4300DY-T1-E3 |
Vishay/Siliconix |
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Data Sheet |
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Data Sheet |
Negotiable |
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Data Sheet |
Negotiable |
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RF Wireless Misc Triple-band GSM900 Pwr Amp |
Data Sheet |
Negotiable |
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