(Hong Kong)
Product Summary
The SI4362DY-T1-E3 is an N-Channel 30-V (D-S) MOSFET. The applications of the SI4362DY-T1-E3 include DC/DC Converters, Synchronous Rectifiers.
Parametrics
SI4362DY-T1-E3 absolute maximum ratings: (1)Drain-Source Voltage, VDS: 30 V; (2)Gate-Source Voltage, VGS: ± 12 V; (3)Continuous Drain Current, ID: 20 A; (4)Pulsed Drain Current (10 μs Pulse Width), IDM: 60 A; (5)Continuous Source Current (Diode Conduction), IS: 2.9 A; (6)Maximum Power Dissipation, PD: 3.5 W; (7)Operating Junction and Storage Temperature Range, TJ, Tstg: -55 to 150 ℃.
Features
SI4362DY-T1-E3 features: (1)TrenchFET Power MOSFET; (2)Optimized for “Low Side” Synchronous Rectifier Operation; (3)100% Rg Tested.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 SI4362DY-T1-E3 |
Vishay/Siliconix |
MOSFET 30 Volt 20 Amp 3.5W |
Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||
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SI4300DY-T1-E3 |
Vishay/Siliconix |
MOSFET 30 Volt 9.0 Amp 2.5W |
Data Sheet |
Negotiable |
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Si4300-E-BM |
Silicon Labs |
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Data Sheet |
Negotiable |
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Si4300-EVB |
Silicon Labs |
RF Development Tools Dual-band GSM900 Pwr Amp EVB |
Data Sheet |
Negotiable |
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Si4300T-B-BM |
Silicon Labs |
RF Wireless Misc Triple-band GSM900 Pwr Amp |
Data Sheet |
Negotiable |
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SI4304DY-T1-E3 |
Vishay/Siliconix |
MOSFET 30V 36A 7.8W |
Data Sheet |
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|
SI4304DY-T1-GE3 |
Vishay/Siliconix |
MOSFET 30V 36A 7.8W 3.2mohm @ 10V |
Data Sheet |
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