(Hong Kong)
Product Summary
The SI4336DY-T1-E3 is an N-Channel 30-V (D-S) MOSFET. The applications of the SI4336DY-T1-E3 include Synchronous Buck Low-Side, Notebook, Server, Workstation, Synchronous Rectifier, POL.
Parametrics
SI4336DY-T1-E3 absolute maximum ratings: (1)Drain-Source Voltage, VDS: 30 V; (2)Gate-Source Voltage, VGS: ± 20 V; (3)Continuous Drain Current, ID: 25 A; (4)Pulsed Drain Current (10 μs Pulse Width), IDM: 70 A; (5)Continuous Source Current (Diode Conduction), IS: 2.9 A; (6)Maximum Power Dissipation, PD: 3.5 W; (7)Operating Junction and Storage Temperature Range, TJ, Tstg: -55 to 150 ℃.
Features
SI4336DY-T1-E3 features: (1)Ultra Low On-Resistance Using High Density TrenchFET Gen II Power MOSFET Technology; (2)Qg Optimized; (3)100% Rg Tested.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 SI4336DY-T1-E3 |
Vishay/Siliconix |
MOSFET 30V 25A 3.5W 3.25mohm @ 10V |
Data Sheet |
Negotiable |
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Pricing (USD) |
Quantity | ||||
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Vishay/Siliconix |
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Data Sheet |
Negotiable |
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SI4300DY-E3 |
Vishay/Siliconix |
MOSFET N-CH MOSFET |
Data Sheet |
Negotiable |
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SI4300DY-T1-E3 |
Vishay/Siliconix |
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Data Sheet |
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Si4300-E-BM |
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Data Sheet |
Negotiable |
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Silicon Labs |
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Data Sheet |
Negotiable |
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Silicon Labs |
RF Wireless Misc Triple-band GSM900 Pwr Amp |
Data Sheet |
Negotiable |
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