Product Summary

The SI4166DY-T1-E3 is an N-Channel 30-V (D-S) MOSFET. The applications of the SI4166DY-T1-E3 include Low-Side DC/DC Conversion, Notebook PC, Gaming.

Parametrics

SI4166DY-T1-E3 absolute maximum ratings: (1)Drain-Source Voltage, VDS: 30 V; (2)Gate-Source Voltage, VGS: ± 20 V; (3)Continuous Drain Current (T = 150 ℃), ID: 24.5 A; (4)Pulsed Drain Current, IDM: 70 A; (5)Continuous Source-Drain Diode Current, IS: 5.9 A; (6)Single Pulse Avalanche Current, IAS: 30 A; (7)Avalanche Energy, EAS: 45 mJ; (8)Maximum Power Dissipation, PD: 4.2 W; (9)Operating Junction and Storage Temperature Range, TJ, Tstg: - 55 to 150 ℃.

Features

SI4166DY-T1-E3 features: (1)Halogen-free; (2)TrenchFET Power MOSFET; (3)100 % Rg and UIS Tested.

Diagrams

SI4166DY-T1-E3 block diagram