SI4100DY-T1-E3

SI4100DY-T1-E3, N-Channel 100-V (D-S) MOSFET, 3 V, 88 A, Vishay Siliconix

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Price:: US $0.20~0.60 / piece [Get Latest Price]

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Qty (lots)	Price/lot
1 ~ 10 :	0.60 / Piece
10 ~ 100 :	0.40 / Piece
100 ~ 1000 :	0.20 / Piece

PartNumber:: SI4100DY-T1-E3

Brand:: Vishay Siliconix - Vishay | Pack: | D/C:

Availability:: Supply Ability: 10000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

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Products Upload time: 2013-08-30

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Part Number:SI4100DY-T1-E3
US $0.20 - 0.60
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piece

Product Summary

The SI4100DY-T1-E3 is an N-Channel 100-V (D-S) MOSFET. The attached spice model of the SI4100DY-T1-E3 describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the -55 to 125℃ temperature ranges under the pulsed 0-V to 10-V gate drive. The saturated output impedance is best fit at the gate bias near the threshold voltage.

Parametrics

SI4100DY-T1-E3 absolute maximum ratings: (1)Gate Threshold Voltage, VGS(th): 3 V; (2)On-State Drain Current, ID(on): 88 A; (3)Drain-Source On-State Resistance, rDS(on): 0.069 Ω; (4)Forward Transconductance, gfs: 12 S; (5)Diode Forward Voltagea, VSD: 0.70 V; (6)Input Capacitance, Ciss: 608 PF; (7)Output Capacitance, Coss: 90 PF; (8)Reverse Transfer Capacitance, Crss: 43 PF; (9)Gate-Source Charge, Qgs: 3 nC; (10)Gate-Drain Charge, Qgd: 4.6 nC.

Features

SI4100DY-T1-E3 features: (1)N-Channel Vertical DMOS; (2)Macro Model (Subcircuit Model); (3)Level 3 MOS; (4)Apply for both Linear and Switching Application; (5)Accurate over the -55 to 125℃ Temperature Range; (6)Model the Gate Charge, Transient, and Diode Reverse Recovery Characteristics.