Product Summary

The MJ2501 is a silicon epitaxial-base PNP power transistor in monolithic Darlington configuration. The MJ2501 is mounted in Jedec TO-3 metal case. The MJ2501 is intented for use in power linear and switching applications.

Parametrics

MJ2501 absolute maximum ratings: (1)Collector-base Voltage (IE = 0): 80 V; (2)Collector-emitter Voltage (IB = 0): 80 V; (3)Emitter-base Voltage (IC = 0): 5 V; (4)Collector Current: 10 A; (5)Base Current: 0.2 A; (6)Total Dissipation at Tc ≤ 25℃: 150 W; (7)Storage Temperature: -65 to 200 ℃; (8)Max. Operating Junction Temperature: 200 ℃.

Features

MJ2501 features: (1)Collector Cut-off, Current (RBE = 1 KΩ): 1 mA; (2)Collector Cut-off, Current (IB = 0): 1 mA; (3)Emitter Cut-off Current(IC = 0): 2 mA; (4)Collector-Emitter, Sustaining Voltage(IB = 0): 80 V; (5)Collector-emitter, Saturation Voltage: 2 V; (6)Base-emitter Voltage: 3 V; (7)DC Current Gain: 1000 V.

Diagrams

MJ2501 block diagram 

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
MJ2501
MJ2501

STMicroelectronics

Transistors Darlington PNP Darlington Power LTB 9-2009

Data Sheet

Negotiable 
Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
MJ2501
MJ2501

STMicroelectronics

Transistors Darlington PNP Darlington Power LTB 9-2009

Data Sheet

Negotiable 
MJ2500/D
MJ2500/D

Other


Data Sheet

Negotiable 
MJ2500
MJ2500

Other


Data Sheet

Negotiable