Product Summary

The M28W320FCT70ZB6F is a 32 Mbit (2 Mbit x 16) non-volatile Flash Memory. It can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. The M28W320FCT70ZB6F operation can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the I/O pin down to 1.65V. An optional 12V VPP power supply is provided to speed up customer programming.

Parametrics

M28W320FCT70ZB6F absolute maximum ratings: (1)TA Ambient Operating Temperature(1): – 40 to 85 °C; (2)TBIAS Temperature Under Bias: – 40 to 125 °C; (3)TSTG Storage Temperature: – 55 to 155 °C; (4)VIO Input or Output Voltage: – 0.6 to VDDQ+0.6 V; (5)VDD, VDDQ Supply Voltage: – 0.6 to 4.1 V; (6)VPP Program Voltage: – 0.6 to 13 V.

Features

M28W320FCT70ZB6F features: (1)supply voltage: vdd = 2.7v to 3.6v core power supply; vddq= 1.65v to 3.6v for input/output; vpp = 12v for fast program (optional) ; (2)access time: 70, 80, 90, 100ns; (3)programming time: 10μs typical; double word programming option; quadruple word programming option; (4)Common Flash Interface; (5)Memory Blocks: Parameter Blocks (Top or Bottom location); Main Blocks; (6)Block Locking: All blocks locked at Power Up; Any combination of blocks can be locked; – WP for Block Lock-Down ; (7)Automatic Stand-by mode; (8)Program and Erase Suspend; (9)100,000 Program/Erase cycles per block.

Diagrams

M28W320FCT70ZB6F pin connection

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