Product Summary

The LM103H-3.3 is a two-terminal monolithic reference diode electrically equivalent to abreakdown diode.The device of the LM103H-3.3 makes use of the reverse punch-through of double-diffusedtransistors, combined with active circuitry, to produce a breakdown characteristic which is ten times sharper than single-junction zener diodes at low voltages.

Parametrics

LM103H-3.3 absolute maximum ratings: (1)Power Dissipation: 250 mW; (2)Reverse Current: 20 mA; (3)Forward Current: 100 mA; (4)Operating Temperature Range: -55 to 125 ℃; (5)Storage Temperature Range: -65 to 150 ℃; (6)Maximum Junction Temperature: 150 ℃; (7)Lead Temperature: 300 ℃; (8)Thermal Resistance: 292 ℃/W; (9)ESD Tolerance: TBD.

Features

LM103H-3.3 features: (1)Exceptionally sharp breakdown; (2)Low dynamic impedance from 10uA to 10mA; (3)Planar, passivated junctions for stable operation; (4)Low capacitance.