(Hong Kong)
Product Summary
The KSP2222 is an NPN General Purpose Amplifier.
Parametrics
KSP2222 absolute maximum ratings: (1)VCBO, Collector-Base Voltage: 75 V; (2)VCEO, Collector-Emitter Voltage: 40 V; (3)VEBO, Emitter-Base Voltage: 6.0 V; (4)IC, Collector current: 600 mA; (5)TJ, Junction Temperature: +150 ℃; (6)Tstg, Storage Temperature: -55 to +150 ℃.
Features
KSP2222 features: (1)Collector-Emitter Voltage: VCEO= 40V; (2)Collector Power Dissipation: PC (max)=625mW; (3)Available as PN2222A.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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 KSP2222A |
Other |
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Data Sheet |
Negotiable |
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KSP2222ABU |
Fairchild Semiconductor |
Transistors Bipolar (BJT) NPN Si Transistor Epitaxial |
Data Sheet |
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KSP2222ATA |
Fairchild Semiconductor |
Transistors Bipolar (BJT) NPN Si Transistor Epitaxial |
Data Sheet |
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KSP2222ATA_Q |
Fairchild Semiconductor |
Transistors Bipolar (BJT) NPN Si Transistor Epitaxial |
Data Sheet |
Negotiable |
|
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KSP2222ATAM |
Fairchild Semiconductor |
Transistors Bipolar (BJT) |
Data Sheet |
Negotiable |
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KSP2222AIUTA |
Fairchild Semiconductor |
Transistors Bipolar (BJT) |
Data Sheet |
Negotiable |
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KSP2222ATF |
Fairchild Semiconductor |
Transistors Bipolar (BJT) NPN Si Transistor Epitaxial |
Data Sheet |
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