(Hong Kong)
Product Summary
The K4S511632D-UC75 is a 536,870,912 bits synchronous high data rate Dynamic RAM. The K4S511632D-UC75 organized as 4 × 8,392,608words by 16bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design of the K4S511632D-UC75 allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.
Parametrics
K4S511632D-UC75 absolute maximum ratings: (1)Voltage on any pin relative to Vss, VIN, VOUT: -1.0 to 4.6 V; (2)Voltage on VDD supply relative to Vss, VDD, VDDQ: -1.0 to 4.6 V; (3)Storage temperature, TSTG: -55 to +150 ℃; (4)Power dissipation, PD: 2 W; (5)Short circuit current, IOS: 50 mA.
Features
K4S511632D-UC75 features: (1)JEDEC standard 3.3V power supply; (2)LVTTL compatible with multiplexed address; (3)Four banks operation; (4)MRS cycle with address key programs, CAS latency, Burst length, Burst type (Sequential & Interleave); (5)All inputs are sampled at the positive going edge of the system clock.; (6)Burst read single-bit write operation; (7)DQM for masking; (8)Auto & self refresh; (9)64ms refresh period.
Diagrams
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K4S510432B |
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K4S510832B |
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K4S510832M |
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K4S511533F - Y(P)C |
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K4S511533F - Y(P)L |
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