Product Summary

The HY628100B is a high speed, low power and 1M bit CMOS Static Random Access Memory. The HY628100B organized as 131,072 words by 8bit. The HY628100B uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particulary well suited for used in high density low power system application. This device has a data retention mode that guarantees data to remain valid at a minimum power supply voltage of 2.0V.

Parametrics

HY628100B absolute maximum ratings: (1)Power Supply, Input/Output Voltage: -0.5 to 7.0 V; (2)Operating Temperature: 0 to 70 ℃; (3)Storage Temperature: -65 to 125 ℃; (4)Power Dissipation: 1.0 W; (5)Data Output Current: 50 mA; (6)Lead Soldering Temperature & Time: 260 · 10 ℃·sec.

Features

HY628100B features: (1)Fully static operation and Tri-state output; (2)TTL compatible inputs and outputs; (3)Battery backup(L/LL-part), 2.0V(min) data retention; (4)Standard pin configuration, 32pin SOP - 525mil, 32pin TSOPI - 8 × 20(Standard).

Diagrams

HY628100B block diagram 

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
HY628100B
HY628100B
Other

Data Sheet
Negotiable 
HY628100BLLG-55
HY628100BLLG-55
Other

Data Sheet
Negotiable 
HY628100BLLT1-70
HY628100BLLT1-70
Other

Data Sheet
Negotiable