(Hong Kong)
Product Summary
The BLF175 is a Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the HF/VHF frequency range. The BLF175 has a 4-lead, SOT123A flange package, with a ceramic cap. All leads are isolated from the flange.
Parametrics
BLF175 absolute maximum ratings: (1)drain-source voltage: 125 V; (2)gate-source voltage: 20 V; (3)DC drain current: 4 A; (4)total power dissipation: 68 W at Tmb ≤ 25 ℃; (5)storage temperature: -65 to +150 ℃; (6)junction temperature: 200 ℃.
Features
BLF175 features: (1)High power gain; (2)Low intermodulation distortion; (3)Easy power control; (4)Good thermal stability; (5)Withstands full load mismatch; (6)Gold metallization ensures excellent reliability.
Diagrams
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 BLF175 |
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Data Sheet |
Negotiable |
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BLF175,112 |
NXP Semiconductors |
Transistors RF MOSFET Power RF DMOS 30W HF-VHF |
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