Product Summary

The BFT19B is an epitaxial NPN silicon planar RF transistor. The BFT19B is in a plastic package similar to TO 119, intended for universal application in amplifiers up to the GHz range,e.g. for broadband antenna amplifiers with a high output power and linearity and for oscilators.

Parametrics

BFT19B absolute maximum ratings: (1)Collector-base-voltage: 25 V; (2)Collector-emitter-voltage: 15 V; (3)Emitter-base voltage: 3.5 V; (4)Collector current: 150 mA; (5)Collector peak current: 300 mA; (6)Base current: 50 mA; (7)Junction temperature: 150 ℃; (8)Storage temperature range: -55 to 125 ℃; (9)Total power dissipation: 700 mW; (10)Junction to ambient air: ≤ 120 K/W; (11)Junction to case: ≤ 90 K/W.

Features

BFT19B features: (1)Collector-base breakdown voltage: ＞25 V; (2)DC current gain: ≥25 V; (3)tRANSITION FREQUENCY: 1.9 GHz; (4)Reverse transfer capacitance: 2.4 pF; (5)Collector-base capacitance: 3 pF; (6)Power gain: 7.5 dB; (7)Noise figure: 6.5 dB; (8)Output voltage: 1000 V.

Diagrams

BFT19B block diagram