(Hong Kong)
Product Summary
The BC817DS is an NPN general purpose double transistor. The BC817DS pairs in a SOT457 (SC-74) plastic package. The applications of the BC817DS include General purpose switching and amplification, Push-pull amplifiers, Multi-phase stepper motor drivers.
Parametrics
BC817DS absolute maximum ratings: (1)VCEO, collector-emitter voltage: 45 V; (2)IC, collector current (DC): 500 mA; (3)ICM,
peak collector current: 1 A; (4)VCBO, collector-base voltage open emitter: 50 V; (5)VCEO, collector-emitter voltage open base: 45 V; (6)VEBO, emitter-base voltage open collector: 5V; (7)IC, collector current (DC): 500 mA; (8)ICM, peak collector current: 1A; (9)IBM, peak base current: 200 mA; (10)Ptot, total power dissipation Tamb ≤ 25 ℃: 370 mW; (11)Tstg, storage temperature: -65 +150 ℃; (12)Tj, junction temperature: 150 ℃; (13)Tamb, operating ambient temperature: -65 +150 ℃; (14)Ptot, total power dissipation Tamb ≤ 25 ℃: 600 mW.
Features
BC817DS features: (1)High current (500 mA); (2)600 mW total power dissipation; (3)Replaces two SOT23 packaged transistors on same PCB area.
Diagrams
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 BC817DS |
Other |
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Data Sheet |
Negotiable |
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BC817DS T/R |
NXP Semiconductors |
Transistors Bipolar (BJT) TRANS DOUBLE TAPE-7 |
Data Sheet |
Negotiable |
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BC817DS,115 |
NXP Semiconductors |
Transistors Bipolar (BJT) TRANS DOUBLE TAPE-7 |
Data Sheet |
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