Product Summary

The AO4850 is a dual n-channel enhancement mode field effect transistor. The AO4850 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs may be used in H-bridge, Inverters and other applications. AO4850 is Pb-free (meets ROHS & Sony 259 specifications).

Parametrics

AO4850 absolute maximum ratings: (1)Drain-Source Voltage: 75V; (2)Gate-Source Voltage: +/-25V; (3)Continuous Drain Current: 3.1 or 2.3 A; (4)Pulsed Drain Current: 15 A; (5)Power Dissipation: 2 W; (6)Junction and Storage Temperature Range: -55 to 150 ℃.

Features

AO4850 features: (1)VDS (V) = 75V; (2)ID = 3.1A (VGS=10V); (3)RDS(ON) < 130mΩ (VGS=10V); (4)RDS(ON) < 165mΩ (VGS=4.5V).

Diagrams

AO4850 pin connection

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
AO4850
AO4850

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Data Sheet
0-3000: $0.14
Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
AO4800
AO4800
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Data Sheet
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AO4800B
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Data Sheet
0-1: $0.47
1-25: $0.33
25-100: $0.28
100-250: $0.24
250-500: $0.21
500-1000: $0.16
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AO4801A

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Data Sheet
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Data Sheet
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AO4803A

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Data Sheet
Negotiable