Product Summary
The AO4840 is a dual n-channel enhancement mode field effect transistor. The AO4840 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. This dual device is suitable for use as a load switch or in PWM applications. Standard Product AO4840 is Pb-free (meets ROHS & Sony 259 specifications). AO4840L is a Green Product ordering option.
Parametrics
AO4840 absolute maximum ratings: (1)Drain-Source Voltage: +/-40V; (2)Gate-Source Voltage: +/-20V; (3)Continuous Drain Current: 6 or 5 A; (4)Pulsed Drain Current: 20 A; (5)Power Dissipation: 2 W; (6)Junction and Storage Temperature Range: -55 to 150 ℃.
Features
AO4840 features: (1)VDS (V) = 40V; (2)ID = 6A (VGS=10V); (3)RDS(ON) < 31mΩ (VGS=10V); (4)RDS(ON) < 45mΩ (VGS=4.5V).
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||||||
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AO4840 |
MOSFET DUAL N-CH 40V 6A 8-SOIC |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||||||
AO4800 |
Other |
Data Sheet |
Negotiable |
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AO4800B |
MOSFET DUAL N-CH 30V 6.9A 8-SOIC |
Data Sheet |
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AO4801 |
Other |
Data Sheet |
Negotiable |
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AO4801A |
MOSFET 2P-CH 30V 5A 8SOIC |
Data Sheet |
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AO4803 |
Other |
Data Sheet |
Negotiable |
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AO4803A |
MOSFET DUAL P-CH -30V -5A 8-SOIC |
Data Sheet |
Negotiable |
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