Product Summary

The AO4485 is a dual P-channel enhancement mode field effect transistor. The AO4485 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications.

Parametrics

AO4485 absolute maximum ratings: (1)Drain-Source Voltage: -30V; (2)Gate-Source Voltage: +/-25V; (3)Continuous Drain Current: -8 or -6.9 A; (4)Pulsed Drain Current: -40 A; (5)Power Dissipation: 2 W; (6)Junction and Storage Temperature Range: -55 to 150 ℃ .

Features

AO4485 features: (1)VDS (V) = -30V; (2)ID = -8A; (3)RDS(ON) < 18mΩ (VGS = -20V); (4)RDS(ON) < 19mΩ (VGS = -10V).

Diagrams

AO4485 pin connection

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
AO4805
AO4805

MOSFET DUAL P-CH -30V -8A 8-SOIC
Data Sheet
0-1: $0.57
1-25: $0.44
25-100: $0.38
100-250: $0.33
250-500: $0.28
500-1000: $0.23
Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
AO4800
AO4800
Other

Data Sheet
Negotiable 
AO4800B
AO4800B

MOSFET DUAL N-CH 30V 6.9A 8-SOIC
Data Sheet
0-1: $0.47
1-25: $0.33
25-100: $0.28
100-250: $0.24
250-500: $0.21
500-1000: $0.16
AO4801
AO4801
Other

Data Sheet
Negotiable 
AO4801A
AO4801A

MOSFET 2P-CH 30V 5A 8SOIC
Data Sheet
0-3000: $0.13
AO4803
AO4803
Other

Data Sheet
Negotiable 
AO4803A
AO4803A

MOSFET DUAL P-CH -30V -5A 8-SOIC
Data Sheet
Negotiable