Product Summary
The AO4660 is a complementary enhancement mode field effect transistor. The AO4660 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. Standard Product AO4600 is Pb-free (meets ROHS & Sony 259 specifications). AO4600L is a Green Product ordering option.
Parametrics
AO4660 absolute maximum ratings: (1)Drain-Source Voltage: +/-30V; (2)Gate-Source Voltage: +/-12V; (3)Continuous Drain Current: 6.9 or 5.8 A; (4)Pulsed Drain Current: 40 A; (5)Power Dissipation: 2 W; (6)Junction and Storage Temperature Range: -55 to 150 ℃.
Features
AO4660 features: (1)n-channel p-channel; (2)VDS (V) = 30V -30V; (3)ID = 6.9A (VGS = 10V) -5A (VGS = -10V); (4)RDS(ON); (5)< 27mΩ¸ < 49m¦¸ (VGS =- 10V); (6)< 32mΩ¸ < 64mΩ¸ (VGS =- 4.5V); (7)< 50mΩ¸ < 120mΩ¸ (VGS = -2.5V).