Product Summary
The AO4614 is a complementary enhancement mode field effect transistor. The AO4614 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. Standard Product AO4614 is Pb-free (meets ROHS & Sony 259 specifications).
Parametrics
AO4614 absolute maximum ratings: (1)Drain-Source Voltage: +/-40V; (2)Gate-Source Voltage: +/-20V; (3)Continuous Drain Current: 6 or -4 A; (4)Pulsed Drain Current: +/-20 A; (5)Power Dissipation: 1.28 W; (6)Junction and Storage Temperature Range: -55 to 150 ℃; (7)Maximum Junction-to-Ambient: 48℃/W .
Features
AO4614 features: (1)n-channel: VDS (V) = 40V, ID = 6A (VGS=10V), RDS(ON)< 31mΩ (VGS=10V), RDS(ON)<45mΩ (VGS=4.5V); (2)p-channel: VDS (V) = -40V, ID = -5A (VGS=-10V), RDS(ON)< 45mΩ (VGS=-10V), RDS(ON)<63mΩ (VGS=-4.5V).
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||||||
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AO4614 |
Other |
Data Sheet |
Negotiable |
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AO4614A |
MOSFET N/P-CH COMPL 40V 8-SOIC |
Data Sheet |
Negotiable |
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AO4614B |
MOSFET DUAL P+N CH 40V 5A SOIC8 |
Data Sheet |
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