Product Summary

The AO4614 is a complementary enhancement mode field effect transistor. The AO4614 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. Standard Product AO4614 is Pb-free (meets ROHS & Sony 259 specifications).

Parametrics

AO4614 absolute maximum ratings: (1)Drain-Source Voltage: +/-40V; (2)Gate-Source Voltage: +/-20V; (3)Continuous Drain Current: 6 or -4 A; (4)Pulsed Drain Current: +/-20 A; (5)Power Dissipation: 1.28 W; (6)Junction and Storage Temperature Range: -55 to 150 ℃; (7)Maximum Junction-to-Ambient: 48℃/W .

Features

AO4614 features: (1)n-channel: VDS (V) = 40V, ID = 6A (VGS=10V), RDS(ON)< 31mΩ (VGS=10V), RDS(ON)<45mΩ (VGS=4.5V); (2)p-channel: VDS (V) = -40V, ID = -5A (VGS=-10V), RDS(ON)< 45mΩ (VGS=-10V), RDS(ON)<63mΩ (VGS=-4.5V).

Diagrams

AO4614 pin connection

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
AO4614
AO4614

Other


Data Sheet

Negotiable 
AO4614A
AO4614A


MOSFET N/P-CH COMPL 40V 8-SOIC

Data Sheet

Negotiable 
AO4614B
AO4614B


MOSFET DUAL P+N CH 40V 5A SOIC8

Data Sheet

0-1: $0.47
1-25: $0.33
25-100: $0.28
100-250: $0.24
250-500: $0.21
500-1000: $0.16