Product Summary
The AO4484 is an N-Channel Enhancement Mode Field Effect Transistor. The AO4484 uses advanced trench technology provide excellent RDS(ON) with low gate charge. The AO4480 is an all purpose device that is suitable for use in a wide range of power conversion applications.
Parametrics
AO4484 absolute maximum ratings: (1)Drain-Source Voltage, VDS: 40 V; (2)Gate-Source Voltage, VGS: ±20 V; (3)Continuous Drain Current, ID: 13.5 to 10 A; (4)Pulsed Drain Current, IDM: 120 A; (5)Avalanche Current: IAR: 23 A; (6)Power Dissipation, PD: 3.1 to 1.7W; (7)Junction and Storage Temperature Range, TJ: -55 to 150 ℃.
Features
AO4484 features: (1)VDS (V) =40V; (2)ID = 10 A (VGS =10V); (3)RDS(ON) < 10mΩ (VGS = 10V); (4)RDS(ON) < 12mΩ(VGS =4.5V).
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||||||
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AO4484 |
MOSFET N-CH 40V 13.5A 8-SOIC |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||||||
AO4401 |
Other |
Data Sheet |
Negotiable |
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AO4402 |
MOSFET N-CH 20V 20A 8SOIC |
Data Sheet |
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AO4403 |
MOSFET P-CH -30V -6.1A 8-SOIC |
Data Sheet |
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AO4404 |
Other |
Data Sheet |
Negotiable |
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AO4404B |
MOSFET N-CH 30V 8.5A 8-SOIC |
Data Sheet |
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AO4405 |
Other |
Data Sheet |
Negotiable |
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