Product Summary
The AO4480 is an N-Channel Enhancement Mode Field Effect Transistor. The AO4480 uses advanced trench technology provide excellent RDS(ON), low gate charge. The AO4480 is ESD protected. This device of the AO4480 is suitable for use as a low side switch in SMPS and general purpose applications. Standard Product AO4480 is Pb-free (meets ROHS & Sony 259 specifications).
Parametrics
AO4480 absolute maximum ratings: (1)Drain-Source Voltage, VDS: 40 V; (2)Gate-Source Voltage, VGS: ±20 V; (3)Continuous Drain Current, ID: 14A; (4)Pulsed Drain Current, IDM: 70 A; (5)Power Dissipation, PD: 3.1 W; (6)Junction and Storage Temperature Range, TJ: -55 to 150 ℃.
Features
AO4480 features: (1)VDS (V) =40V; (2)ID = 14 A (VGS =10V); (3)RDS(ON) < 11.5mΩ (VGS = 10V); (4)RDS(ON) < 15.5mΩ(VGS =4.5V).
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||||||
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AO4480 |
MOSFET N-CH 40V 14A 8-SOIC |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||||||
AO4401 |
Other |
Data Sheet |
Negotiable |
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AO4402 |
MOSFET N-CH 20V 20A 8SOIC |
Data Sheet |
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AO4403 |
MOSFET P-CH -30V -6.1A 8-SOIC |
Data Sheet |
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AO4404 |
Other |
Data Sheet |
Negotiable |
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AO4404B |
MOSFET N-CH 30V 8.5A 8-SOIC |
Data Sheet |
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AO4405 |
Other |
Data Sheet |
Negotiable |
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