Product Summary

The AO4472 is an N-Channel Enhancement Mode Field Effect Transistor. The AO4472 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity, body diode characteristics and ultra-low gate resistance. This device of the AO4472 is ideally suited for use as a load side switch in Notebook CPU core power conversion. Standard Product AO4472 is Pb-free (meets ROHS & Sony 259 specifications). The AO4472 is a Green Product ordering option.

Parametrics

AO4472 absolute maximum ratings: (1)Drain-Source Voltage, VDS: 30 V; (2)Gate-Source Voltage, VGS: ±20 V; (3)Continuous Drain Current, ID: 19 A; (4)Pulsed Drain Current, IDM: 80 A; (5)Power Dissipation, PD: 3 W; (6)Junction and Storage Temperature Range, TJ: -55 to 150 ℃.

Features

AO4472 features: (1)VDS (V) = 30V; (2)ID = 19 A (VGS =10V); (3)RDS(ON) ＜ 5.2mΩ (VGS = 10V); (4)RDS(ON) ＜ 7.2mΩ(VGS =4.5V).

Diagrams

AO4472 block diagram